This course can also be taken for academic credit as ECEA 5632, part of CU Boulder’s Master of Science in Electrical Engineering degree. This course presents in-depth discussion and analysis of metal-oxide-semiconductor field effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, modes of operation, switching and current amplifying behaviors. At the end of this course learners will be able to: 1. Understand and analyze metal-oxide-semiconductor (MOS) device 2. Understand and analyze MOS field effect transistor (MOSFET) 3. Understand and analyze bipolar junction transistor (BJT)
Short Channel Effects 2
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3.8（47 个评分）
从本节课中
MOS Field Effect Transistor (MOSFET)
In this module on MOSFETs (metal-oxide semiconductor field effect transistors), we cover the following topics: History of development of MOSFETs, Device structure, Device types, Circuit symbols, Long channel theory, I-V characteristics, Modes of operation, Channel length modulation, Body bias effect, Bulk charge effect, Sub-threshold conduction, Source/drain charge sharing in short channel devices, Drain induced barrier lowering, Subsurface punchthrough, Mobility degradation, Velocity saturation, Drain current saturation, Scaling of drain current with channel length, and Scaling of speed with channel length.
教学方
Wounjhang Park
Professor
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