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专项课程
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高级

高级

完成时间(小时)

完成时间大约为10 小时

建议:3 weeks of study, 2-5 hours per week....
可选语言

英语(English)

字幕:英语(English)
专项课程
100% 在线

100% 在线

立即开始,按照自己的计划学习。
可灵活调整截止日期

可灵活调整截止日期

根据您的日程表重置截止日期。
高级

高级

完成时间(小时)

完成时间大约为10 小时

建议:3 weeks of study, 2-5 hours per week....
可选语言

英语(English)

字幕:英语(English)

教学大纲 - 您将从这门课程中学到什么

1
完成时间(小时)
完成时间为 4 小时

Metal-Oxide-Semiconductor (MOS) Device

In this module on MOS devices, we will cover the following topics:, MOS device structure, energy band diagram for MOS device at equilibrium, Flat band condition, Accumulation, Depletion, and Inversion of MOS under bias, Energy band diagram and charge distribution for MOS in inversion, Quantitative model and relevant parameters, Energy band diagram with channel bias, Inversion layer charge, and Effect on threshold voltage of MOS in non-equilibrium, C-V characteristics: Charge distribution under different biasing conditions, C-V characteristics: Frequency dependence, Effects of oxide charge on flat band and threshold voltages in non-ideal MOS, and Types of oxide charge in non-ideal MOS....
Reading
8 个视频 (总计 90 分钟), 2 个阅读材料, 1 个测验
Video8 个视频
MOS at Equilibrium10分钟
Basic Operation of MOS13分钟
Analysis of MOS Operation9分钟
Analysis of MOS Operation (Part 2)10分钟
MOS in Non-Equilibrium15分钟
Capacitance-Voltage Characteristics13分钟
Non-Ideal MOS14分钟
Reading2 个阅读材料
Module Topics2分钟
Materials and Constants10分钟
Quiz1 个练习
Homework #1分钟
2
完成时间(小时)
完成时间为 3 小时

MOS Field Effect Transistor (MOSFET)

In this module on MOSFETs (metal-oxide semiconductor field effect transistors), we cover the following topics: History of development of MOSFETs, Device structure, Device types, Circuit symbols, Long channel theory, I-V characteristics, Modes of operation, Channel length modulation, Body bias effect, Bulk charge effect, Sub-threshold conduction, Source/drain charge sharing in short channel devices, Drain induced barrier lowering, Subsurface punchthrough, Mobility degradation, Velocity saturation, Drain current saturation, Scaling of drain current with channel length, and Scaling of speed with channel length....
Reading
7 个视频 (总计 65 分钟), 2 个阅读材料, 1 个测验
Video7 个视频
Basic Operation of MOSFET12分钟
Advanced Operation of MOSFET 19分钟
Advanced Operation of MOSFET 28分钟
Short Channel Effects 18分钟
Short Channel Effects 212分钟
Short Channel MOSFET5分钟
Reading2 个阅读材料
Module Topics2分钟
Materials and Constants10分钟
Quiz1 个练习
Homework #2分钟
3
完成时间(小时)
完成时间为 5 小时

Bipolar Junction Transistor (BJT)

In this module on BJTs (bipolar junction transistors), we will cover the following topics: BJT Device structures, Energy band diagrams, Active bias, Leakage current, Recombination in base, Hoe injection, Non-uniform doping in base, Current gain, Switching with BJT, Single heterojunction bipolar transistor, Double heterojunction bipolar transistor, Non-uniform material, Early effect, Emitter bias dependence, High-level injection, Base, emitter and collector transit times, and RC time constant....
Reading
6 个视频 (总计 79 分钟), 2 个阅读材料, 2 个测验
Video6 个视频
Base-Emitter Current12分钟
Basic Operation of BJT9分钟
Heterojunction Bipolar Transistor (HBT)16分钟
Non-Ideal Behavior13分钟
Frequency Response10分钟
Reading2 个阅读材料
Module Topics2分钟
Materials and Constants10分钟
Quiz1 个练习
Homework #3分钟

讲师

Avatar

Wounjhang Park

Professor
Electrical, Computer, and Energy Engineering

关于 University of Colorado Boulder

CU-Boulder is a dynamic community of scholars and learners on one of the most spectacular college campuses in the country. As one of 34 U.S. public institutions in the prestigious Association of American Universities (AAU), we have a proud tradition of academic excellence, with five Nobel laureates and more than 50 members of prestigious academic academies....

关于 Semiconductor Devices 专项课程

This Semiconductor Devices specialization is designed to be a deep dive into the fundamentals of the electronic devices that form the backbone of our current integrated circuits technology. You will gain valuable experience in semiconductor physics, pn junctions, metal-semiconductor contacts, bipolar junction transistors, metal-oxide-semiconductor (MOS) devices, and MOS field effect transistors. Specialization Learning Outcomes: *Learn fundamental mechanisms of electrical conduction in semiconductors *Understand operating principles of basic electronic devices including pn junction, metal-semiconductor contact, bipolar junction transistors and field effect transistors *Analyze and evaluate the performance of basic electronic devices *Prepare for further analysis of electronic and photonic devices based on semiconductors...
Semiconductor Devices

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