PLEASE NOTE: This version of the course has been formed from an earlier version, which was actively run by the instructor and his teaching assistants. Some of what is mentioned in the video lectures and the accompanying material regarding logistics, book availability and method of grading may no longer be relevant to the present version. Neither the instructor nor the original teaching assistants are running this version of the course. There will be no certificate offered for this course. Learn how MOS transistors work, and how to model them. The understanding provided in this course is essential not only for device modelers, but also for designers of high-performance circuits.
提供方
哥伦比亚大学
教学大纲 - 您将从这门课程中学到什么
周
1完成时间为 1 小时
About This Course and Overview of the MOS Transistor
Welcome to the “MOS Transistors” course! We are very excited to be able to offer this course, and are looking forward to working with you.
2 个视频 （总计 27 分钟）, 1 个阅读材料
1 个阅读材料
Read First: Course Information10分钟
完成时间为 2 小时
Preliminaries and Background
10 个视频 （总计 95 分钟）, 1 个测验
10 个视频
Semiconductors - Part 114分钟
Semiconductors - Part 210分钟
Semiconductors - Part 37分钟
Conduction – Part 110分钟
Conduction – Part 26分钟
Contact Potentials8分钟
pn Junctions – Zero and Forward Bias9分钟
pn Junctions –Under Reverse Bias – Part 110分钟
pn Junctions –Under Reverse Bias – Part 28分钟
1 个练习
Problem Set 116分钟
周
2完成时间为 2 小时
The Two-Terminal and Three-Terminal MOS Structures
9 个视频 （总计 111 分钟）, 1 个测验
9 个视频
The Two-Terminal MOS Structure – Surface Condition14分钟
The Two-Terminal MOS Structure – General Analysis13分钟
The Two-Terminal MOS Structure – Inversion11分钟
The Two-Terminal MOS Structure – Strong Inversion6分钟
The Two-Terminal MOS Structure – Weak Inversion9分钟
The Two-Terminal MOS Structure – Small-Signal Capacitance13分钟
The Three-Terminal MOS Structure – Part 114分钟
The Three-Terminal MOS Structure – Part 217分钟
1 个练习
Problem Set 220分钟
周
3完成时间为 1 小时
The Long-Channel MOS Transistor – Part 1
This is the first module we are dealing with the complete transistor; much of this material, as well as next module's material, will form the core of what we will be covering in the rest of the course. We hope you will spend extra time studying to make sure you understand this material in depth. The total viewing time in each of these two modules is shorter, which should help.
5 个视频 （总计 54 分钟）
5 个视频
Introduction15分钟
Complete All-Region Model14分钟
Simplified All-Region Models11分钟
Strong Inversion Models – 110分钟
Strong Inversion Models – 21分钟
周
4完成时间为 2 小时
The Long-Channel MOS Transistor – Part 2
This material concludes the lectures on the long-channel transistor in DC operation. As mentioned earlier, these lectures will form the core on which many of our subsequent discussions will be based.
5 个视频 （总计 76 分钟）, 1 个测验
5 个视频
Weak Inversion Models13分钟
Source Reference vs. Body Reference6分钟
Effective Mobility20分钟
Additional Topics19分钟
1 个练习
Problem Set 316分钟
4.6
20 个审阅来自MOS 晶体管的热门评论
Very advanced and detailed discussion. Although the assignment were very tough and could not clear, still i liked the course very much. I will do this course again to grasp everything better.
This is the best lecture avaliable on internet. The whole lecture are well designed and and explained. Sir please provide lectures on analog circuit design concept.
讲师
Yannis Tsividis
Charles Batchelor Professor of Electrical EngineeringFu Foundation School of Engineering and Applied Science
关于 哥伦比亚大学
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